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首页> 外文期刊>Scientific reports. >Hydrophilic Graphene Preparation from Gallic Acid Modified Graphene Oxide in Magnesium Self-Propagating High Temperature Synthesis Process
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Hydrophilic Graphene Preparation from Gallic Acid Modified Graphene Oxide in Magnesium Self-Propagating High Temperature Synthesis Process

机译:亲水性石墨烯制备在镁自展高温合成过程中的无碱酸改性的石墨烯制备

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Hydrophilic graphene sheets were synthesized from a mixture of magnesium and gallic acid (GA) modified graphene oxide (GO) in a self-propagating high-temperature synthesis (SHS) process, and hydrophilic graphene sheets displayed the higher C/O ratio (16.36), outstanding conductivity (~88900 S/m) and excellent water-solubility. GO sheets were connected together by GA, and GA was captured to darn GO structure defects through the formation of hydrogen bonds and ester bonds. In SHS process, the most oxygen ions of GO reacted with magnesium to prevent the escape of carbon dioxide and carbon monoxide to from the structure defects associated with vacancies, and GA could take place the high-temperature carbonization, during which a large-area graphene sheets formed with a part of the structure defects being repaired. When only GO was reduced by magnesium in SHS process, and the reduced GO (rGO) exhibited the smaller sheets, the lower C/O ratio (15.26), the weaker conductivity (4200?S/m) and the poor water-solubility because rGO inevitably left behind carbon vacancies and topological defects. Therefore, the larger sheet, less edge defects and free structure defects associated with vacancies play a key role for graphene sheets good dispersion in water.
机译:从镁和没食子酸(Ga)改性的石墨烯氧化物(GO)的混合物中合成亲水石墨烯片,在自蔓延的高温合成(SHS)过程中,亲水性石墨烯片显示出越高的C / O比(16.36) ,突出的导电性(〜88900 s / m)和优异的水溶性。通过Ga通过Ga通过Ga连接在一起,通过形成氢键和酯键来捕获Ga捕获到Darn Go结构缺陷。在SHS过程中,最多的氧离子与镁反应以防止二氧化碳和一氧化碳逸出到与空位相关的结构缺陷,并且Ga可以发生高温碳化,在此期间是大面积的石墨烯用一部分结构缺陷形成的板材正在修复。只有在SHS过程中镁减少时,减少的GO(RGO)表现出较小的纸张,较低的C / O比(15.26),电导率较弱(4200?S / M)和差的水溶解度Rgo不可避免地留下了碳职位空缺和拓扑缺陷。因此,与空位相关的较大的纸张,较少的边缘缺陷和自由结构缺陷在水中的石墨烯片良好分散中起着关键作用。

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