High-responsivity UV-Vis Photodetector Based on Transferable WS₂ Film Deposited by Magnetron Sputtering

摘要

The two-dimensional layered semiconducting tungsten disulfide (WS₂) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS₂ films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS₂ films with low resistance (4.2?kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3?A/W and a high detectivity of 1.22?×?1011 Jones at 365?nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS₂ films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.