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Multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 layers for tunable applications

机译:组成为PbZr 0.52 Ti 0.48 O 3 / Bi 1.5 Zn 1.0 的多层薄膜> Nb 1.5 O 7 层用于可调应用

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The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tunable dielectric properties (tunability?=?49.7% at 500?kV/cm) at a PZT/BZN thickness ratio of 3, while the largest figure of merit is obtained as 51.8. The thickness effect is discussed with a series connection model of bilayer capacitors, and the calculated dielectric constant and loss tangent are obtained. Furthermore, five kinds of thin–film samples comprising single bilayers, two, three, four and five PPBLs were also elaborated with the final same thickness. The four PPBLs show the largest dielectric constant of ~538 and tunability of 53.3% at a maximum applied bias field of 500?kV/cm and the lowest loss tangent of ~0.015, while the largest figure of merit is 65.6. The results indicate that four PPBLs are excellent candidates for applications of tunable devices.
机译:组成为PbZr 0.52 Ti 0.48 O 3 / Bi 1.5 Zn <的多层薄膜的介电性能和可调性在Pt / TiO 2 上通过脉冲激光沉积制备的sub> 1.0 Nb 1.5 O 7 (PZT / BZN)层(PPBLs)研究了> / SiO 2 / Si衬底。介电测量表明,PZT / BZN双层薄膜在PZT / BZN厚度下表现出约490的中等介电常数,0.017的低损耗角正切以及优异的可调谐介电性能(在500?kV / cm时可调谐性== 49.7%)。比例为3,而最高品质因数为51.8。利用双层电容器的串联模型讨论了厚度效应,得到了计算出的介电常数和损耗角正切值。此外,还制作了五种包含单双层,两个,三个,四个和五个PPBL的薄膜样品,最终厚度相同。四个PPBL在最大施加偏置电场为500?kV / cm时,最大介电常数约为538,可调谐性为53.3%,损耗角正切最低,约为0.015,而最大品质因数为65.6。结果表明,四个PPBL是可调设备应用的极佳候选者。

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