Lattice Distortion in In₃SbTe₂ Phase Change Material with Substitutional Bi

摘要

Sb atoms in In₃SbTe₂ (IST) are partially substituted by 3.2–5.5 at.% of Bi atoms. As a result, the NaCl crystal structure of IST is slightly distorted. The distorted inter-planar angles observed with fast Fourier transformation of the lattice images are within the maximum range of interplanar angles calculated by density functional theory. When the Bi content is increased, the crystallization temperature becomes relatively lower than that of IST, the activation energy decreases from 5.29 to 2.61?eV, and the specific heat and melting point are obviously reduced. Consequently, phase change random access memory (PRAM) fabricated with Bi-doped IST (Bi-IST) can operate with lower power consumption than pure IST PRAM. The set and reset speeds of PRAM cells fabricated with Bi-IST are both 100?ns with 5.5 at.% Bi, which are obviously faster than the switching speeds of PRAM cells fabricated with IST and Ge₂Sb₂Te₅ (GST). These experimental results reveal that the switching speed is closely related with the thermal properties of the distorted lattice structure.