This report deals with a 1/ f noise in homogeneous classical semiconductor samples on the base of silicon. We perform detail calculations of resistance fluctuations of the silicon sample due to both a) the charge carrier number changes due to their capture–emission processes, and b) due to screening effect of those negative charged centers, and show that proportionality of noise level to square mobility appears as a presentation parameter, but not due to mobility fluctuations. The obtained calculation results explain well the observed experimental results of 1/ f noise in Si, Ge, GaAs and exclude the mobility fluctuations as the nature of 1/ f noise in these materials and their devices. It is also shown how from the experimental 1/ f noise results to find the effective number of defects responsible for this noise in the measured frequency range.
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