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Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating

机译:离子门控过渡金属二硫属化物中的超导系列。

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Functionalities of two-dimensional (2D) crystals based on semiconducting transition metal dichalcogenides (TMDs) have now stemmed from simple field effect transistors (FETs) to a variety of electronic and opto-valleytronic devices, and even to superconductivity. Among them, superconductivity is the least studied property in TMDs due to methodological difficulty accessing it in different TMD species. Here, we report the systematic study of superconductivity in MoSe2, MoTe2 and WS2 by ionic gating in different regimes. Electrostatic gating using ionic liquid was able to induce superconductivity in MoSe2 but not in MoTe2 because of inefficient electron accumulation limited by electronic band alignment. Alternative gating using KClO4/polyethylene glycol enabled a crossover from surface doping to bulk doping, which induced superconductivities in MoTe2 and WS2 electrochemically. These new varieties greatly enriched the TMD superconductor families and unveiled critical methodology to expand the capability of ionic gating to other materials.
机译:现在,基于半导体过渡金属二硫化碳(TMD)的二维(2D)晶体的功能已经从简单的场效应晶体管(FET)扩展到各种电子和光电电子设备,甚至是超导性。其中,由于在不同TMD物种中难以获得超导电性,因此超导电性是TMD中研究最少的特性。在这里,我们报告了通过离子门控在不同状态下对MoSe 2 ,MoTe 2 和WS 2 中超导性的系统研究。由于电子能带对准限制了无效的电子积累,使用离子液体进行静电门控能够在MoSe 2 中诱导超导,而在MoTe 2 中则不能。使用KClO 4 /聚乙二醇的替代门控实现了从表面掺杂到本体掺杂的过渡,这在电化学上诱导了MoTe 2 和WS 2 的超导电性。这些新品种极大地丰富了TMD超导体系列,并揭示了将离子门控功能扩展到其他材料的关键方法。

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