Transition metal dichalcogenides thyristor realized by solid ionic conductor gate induced doping

摘要

Transition metal dichalcogenides (TMDCs) are promising for future electronic and optoelectronic applications, such as field effect transistors (FETs), for their high carrier mobility with a thin layer, wide bandgap, and organic-like flexibility. However, background doping and unipolar electrical characteristics are commonly observed in TMDCs and their based FETs due to the naturally inevitable vacancy defects, which limit their application in electronics and optoelectronics systems. Here, taking MoS_2 as an example, in a TMDC FET, ambipolar properties were achieved at room temperature by introducing an amorphous solid ionic conductor lithium tantalate (LiTaO_3) as the gate dielectric, which could guarantee the modulation of the Fermi level in the MoS_2 channel by the gate electric field. Based on the modulation mechanisms by the solid ionic conductor-gated electric field for the transformation of conduction mode, the three-terminal device exhibits a gate-controlled rectifying, that is, thyristor performance with a high rectification ratio over 300 obtained at a low gate voltage of 2 V. The present results show the great potential of TMDCs in future logic and other electronic device applications.