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首页> 外文期刊>Bulletin of the American Physical Society >APS -APS March Meeting 2017 - Event - Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.
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APS -APS March Meeting 2017 - Event - Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

机译:APS -APS 2017年3月会议-活动-有机半导体中的载流子相干性和高分辨率霍尔效应测量。

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Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g., [1]). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm$^{mathrm{2}}$V$^{mathrm{-1}}$s$^{mathrm{-1}})$ cite{}, and in order to carefully and accurately characterize it, Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here, we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity, much greater than that attained in conventional Hall measurements [2]. We apply this method to mobility measurements in a variety of OFETs with mobility as low as extasciitilde 0.3 cm$^{mathrm{2}}$V$^{mathrm{-1}}$s$^{mathrm{-1}}$ [2] and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade [3]. REFERENCES:[1]. V. Podzorov, ``Organic single crystals - addressing the fundamentals of organic electronics''. extit{MRS Bulletin} extbf{38}, 15-24 (2013).[2]. Y. Chen, H. T. Yi and V. Podzorov, ``High-Resolution ac Measurements of:[1]. V. Podzorov, ``Organic single crystals - addressing the fundamentals of organic electronics''. extit{MRS Bulletin} extbf{38}, 15-24 (2013).[2]. Y. Chen, H. T. Yi and V. Podzorov, ``High-Resolution ac Measurements of the Hall Effect in Organic Field-Effect Transistors'', extit{Phys. Rev. Applied} extbf{5}, 034008 (2016). [3]. H. T. Yi, Y. N. Gartstein and V. Podzorov, ``Charge carrier coherence and Hall effect in organic semiconductors'', extit{Sci. Reports}, srep23650 (2016).
机译:有机半导体中的电荷传导通常发生在扩展状态下离域载流子的带状相干运动与局部状态的非相干跳变之间的交界处。许多内在因素正在争夺主导运输机制的定义,包括以转移积分表示的分子间相互作用的强度,由于极化子的形成引起的载流子自定位,电子-声子耦合,散射和非对角线的热失调(参见例如,[1])。根据这些过程之间的相互作用,可以实现带状或跳跃电荷传输。除了这些内在因素外,静电失调(化学杂质和结构缺陷)在实际设备中也起着重要作用,它导致载流子在各种能量和时间范围内被捕获。在大多数情况下,OFET中的载流子迁移率相当小(0.1-20 cm $ ^ {mathrm {2}} $ V $ ^ {mathrm {-1}} $ s $ ^ {mathrm {-1}} )$ cite {},并且为了仔细准确地对其进行表征,必须进行霍尔效应测量。在具有低迁移率的系统中,常规霍尔测量极具挑战性。在这里,我们提出了一种新颖的霍尔测量技术,该技术可以在低磁场下以惊人的灵敏度进行测量,其灵敏度远高于传统霍尔测量[2]。我们将这种方法应用于各种OFET中的迁移率测量中,其迁移率低至0.3 cm $ ^ {mathrm {2}} $ V $ ^ {mathrm {-1}} $ s $ ^ {mathrm {-1}} $ [2]并揭示了低运动系统中霍尔效应的各种特性。通过利用这种强大的新实验能力,我们了解了近十年来在OFET中各个小组观察到的霍尔效应的几个``奥秘''[3]。参考文献:[1]。 V.Podzorov,``有机单晶-解决有机电子学的基础知识''。 extit {MRS公告} extbf {38},2013年15月24日。[2]。 Y. Chen,H.T. Yi和V.Podzorov,``高分辨率交流测量:[1]。 V.Podzorov,``有机单晶-解决有机电子学的基本原理''。 extit {MRS公告} extbf {38},2013年15月24日。[2]。 Y.Chen,H.T. Yi和V.Podzorov,``有机场效应晶体管中霍尔效应的高分辨率交流测量'',引文{Phys。修订版} extbf {5},034008(2016)。 [3]。 Yi.H.T.Y,Y.N.Gartstein和V.Podzorov,``有机半导体中的电荷载流子相干性和霍尔效应'',引文{Sci。报告》,srep23650(2016)。

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