Correction: A thermal-induced electric current from a gold electrode/porous silicon device

Cheng-Yin Huang; Chin-Kai Chang; Kai-Hsin Wen; Vincent K. S. Hsiao

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Correction: A thermal-induced electric current from a gold electrode/porous silicon device

机译：校正：来自金电极/多孔硅器件的热感应电流

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Correction for ‘A thermal-induced electric current from a gold electrode/porous silicon device’ by Cheng-Yin Huang et al. , RSC Adv. , 2017, 7 , 38677–38681.

机译：黄成银等人对“金电极/多孔硅器件的热感应电流”的校正。，RSC Adv。，2017，7，38677–38681。

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《RSC Advances 》 |2018年第71期| 共1页
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Cheng-Yin Huang; Chin-Kai Chang; Kai-Hsin Wen; Vincent K. S. Hsiao;
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中图分类化学 ;
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1. A thermal-induced electric current from a gold electrode/porous silicon device (vol 7, pg 38677, 2017) [J] . Huang Cheng-Yin, Chang Chin-Kai, Wen Kai-Hsin, RSC Advances . 2018 ,第71期

机译：来自金电极/多孔硅装置的热诱导电流（Vol 7，PG 38677,2017）
2. A thermal-induced electric current from a gold electrode/porous silicon device [J] . Cheng-Yin Huang, Chin-Kai Chang, Kai-Shin Wen, RSC Advances . 2017 ,第61期

机译：金电极/多孔硅器件的热感应电流
3. Current improvement of porous silicon photovoltaic devices by using double layer porous silicon structure: applicable in porous silicon solar cells [J] . M. Rajabi, R. S. Dariani Journal of porous materials . 2009 ,第5期

机译：利用双层多孔硅结构对多孔硅光伏器件的当前改进：适用于多孔硅太阳能电池
4. PDIF-CN2 modified porous silicon optical and electrical transducers for biochemical sensing electrical and optical sensing by porous silicon devices [C] . Calio A., Cassinese A., Barra M., Fotonica AEIT Italian Conference on Photonics Technologies . 2014

机译：PDIF-CN2改性的多孔硅光电传感器，用于生化传感，多孔硅器件的电学和光学传感
5. Study of Thermal-induced Threshold Switching Devices for Selector Applications [D] . Li, Dasheng. 2018

机译：选择器应用的热感应门限开关装置的研究
6. Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz [O] . Panagiotis Sarafis, Androula Galiouna Nassiopoulou 2014

机译：多孔硅的介电特性用作140至210 GHz频率范围内毫米波器件的片上集成的基板
7. Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices [O] . Khedher N., Ben Jaballah A., Bouaïcha M., 2009

机译：多孔硅外部吸气对金属-氧化物-硅器件电性能的影响

Correction: A thermal-induced electric current from a gold electrode/porous silicon device

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