A thermal-induced electric current from a gold electrode/porous silicon device (vol 7, pg 38677, 2017)

Huang Cheng-Yin; Chang Chin-Kai; Wen Kai-Hsin; Hsiao Vincent K. S.

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A thermal-induced electric current from a gold electrode/porous silicon device (vol 7, pg 38677, 2017)

机译：来自金电极/多孔硅装置的热诱导电流（Vol 7，PG 38677,2017）

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Correction for A thermal-induced electric current from a gold electrode/porous silicon device' by Cheng-Yin Huang et al., RSC Adv., 2017, 7, 38677-38681.

机译：由Cheng-Yin Huang等，Cheng-Yin Huang等，RSC ADV。，2017,7,38677-38681的校正来自金电极/多孔硅装置的热诱导的电流。

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《RSC Advances 》 |2018年第71期| 共1页
作者
Huang Cheng-Yin; Chang Chin-Kai; Wen Kai-Hsin; Hsiao Vincent K. S.;
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作者单位

Natl Chi Nan Univ Dept Appl Mat &

Optoelect Engn Nantou 54561 Taiwan;

Natl Chi Nan Univ Dept Appl Mat &

Optoelect Engn Nantou 54561 Taiwan;

Natl Chi Nan Univ Dept Appl Mat &

Optoelect Engn Nantou 54561 Taiwan;

Natl Chi Nan Univ Dept Appl Mat &

Optoelect Engn Nantou 54561 Taiwan;

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正文语种 eng
中图分类化学 ;
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1. A thermal-induced electric current from a gold electrode/porous silicon device (vol 7, pg 38677, 2017) [J] . Huang Cheng-Yin, Chang Chin-Kai, Wen Kai-Hsin, RSC Advances . 2018 ,第71期

机译：来自金电极/多孔硅装置的热诱导电流（Vol 7，PG 38677,2017）
2. Correction: A thermal-induced electric current from a gold electrode/porous silicon device [J] . Cheng-Yin Huang, Chin-Kai Chang, Kai-Hsin Wen, RSC Advances . 2018 ,第71期

机译：校正：来自金电极/多孔硅器件的热感应电流
3. A thermal-induced electric current from a gold electrode/porous silicon device [J] . Cheng-Yin Huang, Chin-Kai Chang, Kai-Shin Wen, RSC Advances . 2017 ,第61期

机译：金电极/多孔硅器件的热感应电流
4. PDIF-CN2 modified porous silicon optical and electrical transducers for biochemical sensing electrical and optical sensing by porous silicon devices [C] . Calio A., Cassinese A., Barra M., Fotonica AEIT Italian Conference on Photonics Technologies . 2014

机译：PDIF-CN2改性的多孔硅光电传感器，用于生化传感，多孔硅器件的电学和光学传感
5. Template synthesis and characterization of nanostructured lithium insertion electrodes and nanogold/porous aluminum oxide composite membranes. [D] . Patrissi, Charles John. 2000

机译：纳米结构化锂插入电极和纳米金/多孔氧化铝复合膜的模板合成与表征。
6. Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz [O] . Panagiotis Sarafis, Androula Galiouna Nassiopoulou 2014

机译：多孔硅的介电特性用作140至210 GHz频率范围内毫米波器件的片上集成的基板
7. Effect of external gettering with porous silicon on the electrical properties of Metal–Oxide–Silicon devices [O] . Khedher N., Ben Jaballah A., Bouaïcha M., 2009

机译：多孔硅外部吸气对金属-氧化物-硅器件电性能的影响

A thermal-induced electric current from a gold electrode/porous silicon device (vol 7, pg 38677, 2017)

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