Memristive behavior in In₂Se₃ asymmetrical hetero-structures

摘要

Based on Ag/In₂Se₃/ITO and Ta/In₂Se₃/ITO asymmetrical heterostructures, several memristive samples were prepared by the magnetron sputtering method. The In₂Se₃ core layer is in the γ-phase, as determined by XRD and Raman spectroscopy measurements. Current–voltage measurements reveal the bipolar resistive switching characteristics at room temperature. The underlying mechanism can be well interpreted by the space-charge limited conduction effect with redistribution and migration of charged defects responsible for the switching effect. The achieved bipolar resistive switching behaviour of the In₂Se₃ samples can be adjusted by transforming different electrodes. It seems to be a promising candidate in prospective nonvolatile memory and neuromorphic circuit applications.