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Defect-sensitive performance of silicene sheets under uniaxial tension: mechanical properties, electronic structures and failure behavior

机译:硅片在单轴张力下的敏感特性:机械性能,电子结构和破坏行为

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As a silicon analog of graphene, silicene has attracted considerable attention due to its unique physical and chemical properties. Pioneering studies have demonstrated that defects in graphene-like two-dimensional materials are considered tools for tuning the physical properties of these materials. In this work, the influence of defects on the mechanical properties and failure behavior of silicene sheets were investigated using molecular mechanics and molecular dynamics methods. The results showed that the intrinsic strength of the silicene sheets decreased with increased linear density for vacancies, width ratio for cracks, and inflection angle for grain boundaries. The elastic properties of the silicene sheets were affected by not only the defects but also their corrugated structure. Fracture failure of the silicene sheet with defects usually started from the Si–Si bond, which was located at the defect edge. The stretching strain could tune the electronic structure of the silicene sheets. This study demonstrated the defect-sensitive performance of silicene under uniaxial tension and thus helped evaluate and extend the application of this material.
机译:作为石墨烯的硅类似物,硅因其独特的物理和化学特性而受到了广泛的关注。开拓性研究表明,石墨烯状二维材料中的缺陷被认为是调节这些材料的物理性能的工具。在这项工作中,使用分子力学和分子动力学方法研究了缺陷对硅片的机械性能和破坏行为的影响。结果表明,随着空位线密度,裂纹宽度比和晶界拐角的增加,硅片的固有强度降低。硅片的弹性不仅受到缺陷的影响,还受到其波纹结构的影响。具有缺陷的硅片的断裂破坏通常是从位于缺陷边缘的Si-Si键开始的。拉伸应变可以调整硅片的电子结构。这项研究证明了硅在单轴张力下的缺陷敏感性性能,从而有助于评估和扩展该材料的应用。

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