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Direct observation and temperature control of the surface Dirac gap in a topological crystalline insulator

机译:拓扑晶体绝缘体中表面狄拉克间隙的直接观察和温度控制

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Since the advent of topological insulators hosting Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators where the topological states are protected by crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here we show a temperature-driven gap opening in Dirac surface states within the topological crystalline insulator phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between massless and massive topological states on the surface of a topological system.
机译:自从出现容纳狄拉克表面状态的拓扑绝缘子以来,人们一直在努力以可控的方式消除这些状态。通过发现拓扑晶体绝缘体,开辟了一条新的途径,其中拓扑状态受到晶体对称性的保护,因此易于因晶格结构变化而形成缝隙。在这里,我们在(Pb,Sn)Se的拓扑晶体绝缘体相中的Dirac表面态中显示了一个温度驱动的间隙开口。通过使用角度分辨光电子能谱,研究了间隙的形成和质量获取随成分和温度的变化。所得的观察结果导致(Pb,Sn)Se(001)的拓扑相图中在无质量和块狄拉克状态之间增加了温度和成分相关的边界。总体而言,我们的结果通过实验确定了在拓扑系统表面上的无质量和大规模拓扑状态之间进行调整的可能性。

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