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Effects of substrate temperature on the properties of the indium tin oxide thin films deposited by sputtering method

机译:衬底温度对溅射法沉积铟锡氧化物薄膜性能的影响

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High-quality transparent conductive indium tin oxide (ITO) thin films were deposited on glass substrates using radio frequency sputtering method. The structure and electrical and optical properties of the ITO thin films were mainly investigated. The ITO thin films showed strong diffraction peak having a preferred orientation along the [111] direction as the deposition temperature at 120 to 160 °C. In the transmission spectra, the optical transmittance increased in the visible range as the deposition temperature increased from RT to 160 °C. A minimum resistivity of 3.06×10~(-3)Ω-cm was obtained for the ITO thin film deposition at 160 °C.
机译:使用射频溅射方法在玻璃基板上沉积高质量的透明导电铟锡氧化物(ITO)薄膜。主要研究了ITO薄膜的结构,电学和光学性能。 ITO薄膜显示出较强的衍射峰,在120至160°C的沉积温度下,衍射峰沿[111]方向具有较好的取向。在透射光谱中,随着沉积温度从RT升高到160°C,光学透射率在可见光范围内增加。在160°C的条件下,ITO薄膜的最小电阻率为3.06×10〜(-3)Ω-cm。

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