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Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H-2-Ar sputtering gas mixture

机译:室温下在玻璃和PET基板上沉积的铟锡氧化物薄膜:H-2-Ar溅射气体混合物的光学和电学性质变化

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The optical and electrical properties of indium tin oxide (ITO) films deposited at room temperature on glass and polyethylene terephthalate (PET) substrates were investigated. A clear evolution of optical transparency and sheet resistance with the content of H-2 in the gas mixture of H-2 and Ar during magnetron sputtering deposition is observed. An optimized performance of the transparent conductive properties ITO films on PET was achieved for samples prepared using H-2/(Ar + H-2) ratio in the range of 0.3-0.6%. Moreover, flexible ITO-PET samples show a better transparent conductive figure of merit, Phi(TC) = T-10/R-S, than their glass counterparts. These results provide valuable insight into the room temperature fabrication and development of transparent conductive ITO-based flexible devices. (C) 2015 Elsevier B.V. All rights reserved.
机译:研究了室温下在玻璃和聚对苯二甲酸乙二酯(PET)基底上沉积的铟锡氧化物(ITO)膜的光学和电学性质。观察到在磁控溅射沉积过程中,随着H-2和Ar的气体混合物中H-2的含量,光学透明度和薄层电阻明显变化。对于使用在0.3-0.6%范围内的H-2 /(Ar + H-2)比制备的样品,获得了PET上透明导电性能ITO膜的优化性能。而且,柔性ITO-PET样品显示出比玻璃同类产品更好的透明导电品质因数Phi(TC)= T-10 / R-S。这些结果为在室温下制造和开发基于透明导电ITO的柔性器件提供了宝贵的见识。 (C)2015 Elsevier B.V.保留所有权利。

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