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New Approach to Low-Power & Leakage Current Reduction Technique for CMOS Circuit Design

机译:用于CMOS电路设计的低功耗和漏电流减小技术的新方法

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Leakage power dissipation has become major portion of total power consumption in the integrated device and is expected to grow exponentially in the next decade as per International Technology Roadmap for Semiconductors (IRTS). This directly affects the battery operated devices as it has long idle times. Thus by scaling down the threshold voltage has tremendously increased the sub threshold leakage current thereby making the static power dissipation very high. To overcome this problem several techniques has been proposed to overcome this high leakage power dissipation. A comprehensive survey and analysis of various leakage power minimization techniques is presented in this paper. Of the available techniques, eight techniques are considered for the analysis namely, Multi Threshold CMOS (MTCMOS), Super Cut-off CMOS (SCCMOS), Forced Transistor Stacking (FTS) and Sleepy Stack (SS), Sleepy keeper (SK), Dual Stack (OS), and LECTOR. From the results, it is observed that Lector techniques produces lower power dissipation than the other techniques due to the ability of power gating.
机译:漏电功耗已成为集成设备总功耗的主要部分,根据国际半导体技术路线图(IRTS),预计在未来十年内呈指数级增长。这将直接影响电池供电的设备,因为它具有较长的空闲时间。因此,通过按比例缩小阈值电压已大大增加了子阈值泄漏电流,从而使静态功耗非常高。为了克服这个问题,已经提出了几种技术来克服这种高泄漏功率耗散。本文对各种泄漏功率最小化技术进行了全面的调查和分析。在可用技术中,考虑使用八种技术进行分析,即多阈值CMOS(MTCMOS),超级截止CMOS(SCCMOS),强制晶体管堆叠(FTS)和休眠堆栈(SS),休眠保持器(SK),双通道堆栈(OS)和LECTOR。从结果可以看出,由于功率门控的能力,Lector技术产生的功耗比其他技术要低。

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