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首页> 外文期刊>Bulletin of the Korean Chemical Society >Highly Crystalline 2,6,9,10-Tetrakis((4-hexylphenyl)ethynyl)anthracene for Efficient Solution-Processed Field-effect Transistors
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Highly Crystalline 2,6,9,10-Tetrakis((4-hexylphenyl)ethynyl)anthracene for Efficient Solution-Processed Field-effect Transistors

机译:高结晶度的2,6,9,10-四((4-己基苯基)乙炔基)蒽,用于高效溶液处理的场效应晶体管

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A new anthracene-containing conjugated molecule was synthesized through the Sonogashira coupling and reduction reactions. 1-Ethynyl-4-hexylbenzene was coupled to 2,6-bis((4-hexylphenyl) ethynyl)anthracene- 9,10-dione through a reduction reaction to generate 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene. The semiconducting properties were evaluated in an organic thin film transistor (OTFT) and a single-crystal fieldeffect transistor (SC-FET). The OTFT showed a mobility of around 0.13 cm2 V−1 s−1 (ION/IOFF 106), whereas the SC-FET showed a mobility of 1.00-1.35 cm2 V−1 s−1, which is much higher than that of the OTFT. Owing to the high photoluminescence quantum yield of 2,6,9,10-tetrakis((4-hexylphenyl)ethynyl) anthracene, we could observe a significant increase in drain current under irradiation with visible light (λ = 538 nm, 12.5 μW/ cm2).
机译:通过Sonogashira偶联和还原反应合成了新的含蒽共轭分子。 1-乙炔基-4-己基苯通过还原反应与2,6-双((4-己基苯基)乙炔基)蒽-9,10-二酮偶联生成2,6,9,10-四((4-己基苯基) )乙炔基)蒽。在有机薄膜晶体管(OTFT)和单晶场效应晶体管(SC-FET)中评估了半导体性能。 OTFT的迁移率约为0.13 cm2 V-1 s-1(ION / IOFF> 106),而SC-FET的迁移率则为1.00-1.35 cm2 V-1 s-1,这远高于OTFT的迁移率。 OTFT。由于2,6,9,10-四((4-己基苯基)乙炔基)蒽的高光致发光量子产率,我们可以观察到可见光(λ= 538 nm,12.5μW/平方厘米)。

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