Improved current gain at high collector current densities for SiGe heterostructure transistors

摘要

A two-dimensional simulation study is presented to analyze the current gain performance of an NPNSi/SiGe/SiGe graded heterojunction bipolar transistor (SiGe GHBT) having a uniform 20 atomic per cent (at%) Ge profile in its base and a linear tapering of Ge