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Adsorptive Stripping Voltammetry of the Indium-8-Hydroxyquinoline Complex

机译:铟-8-羟基喹啉络合物的吸附溶出伏安法

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A sensitive stripping voltammetric study of the complex of indium with 8-hydroxyquinoline at a hanging mercury drop electrode was investigated in 0.1M acetate buffer solution. The effects of various analytical conditions on the reduction peak current of the adsorbed complex were discussed. Optimal analytical conditions were found to be the ligand concentration of 2 ?? 10-5M, solution pH 4.75, scan rate of 10 mV/s, deposition potential of -0.450V, a deposition time of 90 second. Interferences by other trace metals and Triton X-100 were also discussed. Detection limit was 0.2 ppb of indium after 90 sec. Deposition time, and the relative standard deviation(n = 10) at 4 ppb was 3.2%.
机译:在0.1M乙酸盐缓冲溶液中,对悬挂的汞滴电极上铟与8-羟基喹啉的络合物进行了灵敏的溶出伏安研究。讨论了各种分析条件对吸附的络合物还原峰电流的影响。发现最佳的分析条件是配体浓度为2 ??。 10-5M,溶液pH值为4.75,扫描速率为10 mV / s,沉积电位为-0.450V,沉积时间为90秒。还讨论了其他痕量金属和Triton X-100的干扰。 90秒钟后,检测限为0.2 ppb铟。沉积时间和4 ppb时的相对标准偏差(n = 10)为3.2%。

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