Simulation of Multi-Plateau-Temperature Process Intended for Simultaneous Gettering of Chromium, Iron and Nickel in Silicon

摘要

In this paper, computational results of simultaneous gettering of chromium (Cr), iron (Fe) and nickel (Ni) in p-type silicon by phosphorus diffusion are presented. The study was carried out by a software tool "GetProg" developed in our centre CRTSE. Simulated aspect includes impurity diffusion, segregation and also precipitates dissolution phenomenon. The kinetics of dissolved impurities gettering has been described by a diffusion-segregation equation (DSE) extended by precipitates dissolution term. The input initial parameters of metals in material were mainly taken from experimental results obtained for sheet multicrystalline silicon. The simulation allowed the study of the simultaneous behaviour of Cr, Fe and Ni during an optimized multi-plateau-gettering process (MPG). Two MPG scenarios have been investigated; High-Low and Low-High temperature. The findings demonstrate that the MPG effectiveness of studied metals depends significantly on the nature of metal and its initial concentration, as well as the used MPG scenario.