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首页> 外文期刊>Journal of Solid Mechanics and Materials Engineering >Development of an Efficient Inverse Analysis Technique for Monitoring of Electroplating Current Density on Target Region in LSI Fabrication
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Development of an Efficient Inverse Analysis Technique for Monitoring of Electroplating Current Density on Target Region in LSI Fabrication

机译:用于监控LSI制造目标区域上电镀电流密度的高效反分析技术的开发

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摘要

Our research focuses on the techniques for monitoring the current density distribution of the real-time electroplating. In the previous research, a novel technique to estimate electroplating current densities on plated surfaces from the data of the electric potentials in the plating cells has been developed for LSI fabrication technology. The technique described in this paper has been applied for a 2 dimensional (2D) analysis in our previous research work; however, the 2D approach limits the application of the proposed method. In this research, we applied the monitoring technique with 3 dimensional (3D) analysis. Although the inverse analysis using the 3D analysis tends to be large scale, it is important for the practical usage to monitor current density on target region accurately and efficiently. Therefore we have developed an efficient inverse analysis technique for monitoring of electroplating current density on the target region and verified the effectiveness of the proposed technique by using numerical simulations.
机译:我们的研究重点是用于监视实时电镀的电流密度分布的技术。在先前的研究中,已经开发了一种用于根据LSI制造技术从电镀单元中的电位数据估计电镀表面上的电镀电流密度的新技术。本文中介绍的技术已在我们先前的研究工作中应用于二维(2D)分析;但是,二维方法限制了所提出方法的应用。在这项研究中,我们将监控技术应用于3维(3D)分析。尽管使用3D分析的逆分析趋于大规模化,但是对于实际使用而言准确且有效地监视目标区域上的电流密度是重要的。因此,我们开发了一种有效的逆分析技术来监控目标区域上的电镀电流密度,并通过数值模拟验证了所提出技术的有效性。

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