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首页> 外文期刊>Journal of Photopolymer Science and Technology >Study of Pattern Collapse for Freezing Free Litho-Litho-Etch Double Patterning
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Study of Pattern Collapse for Freezing Free Litho-Litho-Etch Double Patterning

机译:冻结自由平版-光刻-蚀刻双图案的图案塌陷研究

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Pattern collapse becomes one of the serious issues for critical patterning process below 45nm half pitch. Many reports have been published in recent days to investigate pattern collapse mechanism. There are factors such as capillary force, hardness, swelling, and pattern profile that can cause pattern collapse.On the other hand, Litho-Litho-Etch (LLE) without freezing process has been recognized as a promising candidate because of its cost effectiveness among double patterning processes. The materials using 2nd resist formulation is totally different from the one on 1st resist because it is necessary that 2nd resist solution doesn't dissolve 1st resist during 2nd litho process. Therefore, pattern collapse mitigation on freezing free LLE process can pose considerable challenges.In this report, the improvement of pattern collapse on 2nd resist will be discussed by focusing on the surface free energy and the swelling during its development process.
机译:在低于45nm半节距的情况下,图案崩溃成为关键图案工艺的严重问题之一。最近几天已经发表了许多研究模式崩溃机制的报告。毛细作用力,硬度,膨胀和图案轮廓等因素可能会导致图案塌陷。另一方面,未经冷冻处理的Litho-Litho-Etch(LLE)由于其成本效益而被公认为有希望的候选者双重图案化工艺。使用第二抗蚀剂配方的材料与第一抗蚀剂的材料完全不同,因为在第二光刻工艺中第二抗蚀剂溶液必须不溶解第一抗蚀剂是必要的。因此,在自由冷冻的LLE工艺中减轻图案塌陷可能会带来相当大的挑战。在本报告中,将着重讨论第二抗蚀剂的图案塌陷的改善,重点是表面自由能及其在显影过程中的溶胀。

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