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首页> 外文期刊>Journal of Photopolymer Science and Technology >Cu/Polyimide Multilayer Interconnections Fabricated by Nanoimprint at Every Lithography Process
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Cu/Polyimide Multilayer Interconnections Fabricated by Nanoimprint at Every Lithography Process

机译:在每个光刻工艺中通过纳米压印制造的铜/聚酰亚胺多层互连

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In this study, Cu/polyimide multilayer interconnections (dual-damascene) approach based on a UV-assisted thermal nanoimprint technique at every lithography process was demonstrated aiming at developing a low-cost fabrication process for high-density interconnections in polyimide. The dual-damascene process can be simplified by nanoimprint using a multi-tiered mold, and realize fine interconnections using a soluble polyimide block copolymer with a high formability and low shrinkage during a polyimide patterning process. Three-layered Cu/polyimide structures with a minimum wire-width of 5 μm were fabricated in the polyimide by performing subsequent Cu electroplating and chemical mechanical polishing (CMP). The feasibility of the process was thus verified. The electric resistances values of the fabricated three-layered interconnections measured by a four-terminal method showed linear increase as a function of the number of interconnection vias. Heat resistance test at 260 °C which corresponded to reflow soldering process was also evaluated; less than 1.2%-increasing ratio of electric resistance was obtained in the case of 3-cycle heating.
机译:在这项研究中,展示了在每个光刻工艺中基于UV辅助热纳米压印技术的Cu /聚酰亚胺多层互连(双大马士革)方法,旨在开发一种低成本的制造高密度互连中的高密度互连的工艺。通过使用多层模具进行纳米压印,可以简化双大马士革工艺,并在聚酰亚胺构图过程中使用具有高成形性和低收缩率的可溶性聚酰亚胺嵌段共聚物实现精细互连。通过执行后续的Cu电镀和化学机械抛光(CMP),在聚酰亚胺中制造出最小线宽为5μm的三层Cu /聚酰亚胺结构。由此证实了该方法的可行性。通过四端子法测量的所制造的三层互连的电阻值显示出作为互连通孔数量的函数的线性增加。还评估了在260°C下对应于回流焊接工艺的耐热性测试;在三循环加热的情况下,获得小于1.2%的电阻增加率。

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