Relationship between Resolution Blur and Stochastic Defect of Chemically Amplified Resists Used for Extreme Ultraviolet Lithography

摘要

The stochastic defect generation such as pinching and bridging is a serious concern in extreme ultraviolet (EUV) lithography. The resolution blur (caused by secondary electrons) as well as the shot noise of EUV photons is considered to affect the stochastic defect generation. In this study, the relationship between resolution blur and stochastic defect generation in chemically amplified resists was investigated assuming two virtual sensitization mechanisms to clarify the effects of resolution blur. For the non-sequential radiative model, the increase of quantum efficiency from 2 to 4 is considered to be effective for the sensitivity enhancement, when the sensitization distance is shorter than 3 nm.