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首页> 外文期刊>Journal of Ovonic Research >Structural and optical properties of Cu-Zno films deposited by thermal evaporation
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Structural and optical properties of Cu-Zno films deposited by thermal evaporation

机译:热蒸发沉积Cu-Zno薄膜的结构和光学性质

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摘要

Polycrystalline zinc oxide (P-ZnO) films are deposited on glass substrates for 2 min exposure time (ETs) by thermal evaporation. These P-ZnO films are further exposed in evaporated Cu species (ECuS) for different (0.5, 1, 1.5 and 2 min) ETs. XRD patterns shows the development of different planes related to ZnO phase and confirms the deposition of P-ZnO films. The shift in diffraction angle of ZnO (101) plane confirms the doping of Cu in ZnO lattice. The preferential growth orientation of P-ZnO and Cu doped ZnO films strongly depends on Cu contents and substrate surface temperature raised during deposition process. The values of crystallite size, micro-strains, dislocation density and texture coefficient of Cu doped ZnO film (deposited for 1.5 min ETs) are found to be 30.16 nm, 0.072, 10.99 × 10-4 nm-2 and 1.66 respectively. SEM microstructure of P-ZnO film is changed with increasing ETs in ECuS. EDX analysis confirms the presence of Zn, Cu and O in the deposited films. The values of Eg of P-ZnO and Cu doped ZnO films are found to be 3.42, 2.89, 3.74, 3.65 and 2.67 eV respectively.
机译:通过热蒸发将多晶氧化锌(P-ZnO)膜沉积在玻璃基板上2分钟的曝光时间(ETs)。将这些P-ZnO薄膜进一步暴露在蒸发的Cu物种(ECuS)中,用于不同的(0.5、1、1.5和2分钟)ET。 XRD图谱显示了与ZnO相有关的不同平面的发展,并证实了P-ZnO膜的沉积。 ZnO(101)平面衍射角的移动证实了ZnO晶格中的Cu掺杂。 P-ZnO和掺杂Cu的ZnO薄膜的优先生长方向在很大程度上取决于Cu含量和沉积过程中衬底表面温度的升高。发现铜掺杂的ZnO薄膜(沉积时间为1.5分钟)的晶粒尺寸,微应变,位错密度和织构系数分别为30.16 nm,0.072、10.99×10-4 nm-2和1.66。随着ECuS中ET的增加,P-ZnO膜的SEM微观结构发生变化。 EDX分析证实了沉积膜中锌,铜和氧的存在。发现P-ZnO和Cu掺杂的ZnO薄膜的Eg值分别为3.42、2.89、3.74、3.65和2.67 eV。

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