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首页> 外文期刊>Journal of Nanostructures >Dependence of Nanostructure and the Optical Properties of Ni Thin Films with Different Thicknesses on the Substrate Temperature
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Dependence of Nanostructure and the Optical Properties of Ni Thin Films with Different Thicknesses on the Substrate Temperature

机译:不同厚度的镍薄膜的纳米结构和光学性质对衬底温度的影响

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Nickel films with the thicknesses of 30 and 120 nm were deposited on glass substrates, at different substrate temperatures (313 to 600 K) under uhv condition. The nano-structure of the films and mean diameter of grains was obtained for each films using atomic force microscopy (AFM). Their optical properties were measured by spectrophotometry in the spectral range of 190-2500 nm. Kramers-Kronig method was used for the analysis of the reflectivity curves. The Effective Medium Approximation (EMA) analysis was used to determine the values of volume fraction of voids (fv)and establish the relationship between the nanostructure of the film and EMA predictions. Qualitatively good agreements between structure Zone Model (SZM) as a function of substrate temperature and the values of (fv), is achieved. There is good agreement between these values and the results of mean diameter of grains for Ni films too. The absorption peaks of Ni thin films at ~ 1.4 eV and 5 eV are observed, with an additional bump at about 2 eV. The 1.4 eV peak is in particular much stronger than that obtained in earlier works on Ni thin films (Johnson and Christy (1974)) and on bulk Ni sample (Lynch et al (1971) and Ehrenrich et al (1963)). This is resulted from producing thin films under uhv condition. The conductivities σ1 and σ2 calculated from ?1 and ?2 for Ni films and were plotted vs energy.
机译:在uhv条件下,在不同的基板温度(313至600 K)下,将厚度为30和120 nm的镍膜沉积在玻璃基板上。使用原子力显微镜(AFM)获得了每个薄膜的薄膜纳米结构和平均晶粒直径。通过分光光度法在190-2500nm的光谱范围内测量它们的光学性质。使用Kramers-Kronig方法分析反射率曲线。有效介质近似(EMA)分析用于确定空隙体积分数(fv)的值,并建立薄膜的纳米结构与EMA预测之间的关系。在结构区域模型(SZM)随基材温度和(fv)值之间达成了定性良好的协议。这些值与镍膜晶粒平均直径的结果之间也有很好的一致性。观察到Ni薄膜的吸收峰在〜1.4 eV和5 eV处,另外的凸起在约2 eV处。 1.4 eV峰特别强于早期的镍薄膜(Johnson和Christy(1974))和大块镍样品(Lynch等人(1971)和Ehrenrich等人(1963))获得的峰。这是由于在超高压条件下生产薄膜而导致的。根据电导率σ1和σ2计算出的Ni薄膜的电导率σ1和σ2,并绘制了它们相对于能量的曲线。

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