THE RESISTANCE SWITCHING PROPERTIES AND MECHANISMINAg /ZrO 2 /Ta SANDWICH STRUCTURE

摘要

The resistive memory devicebased on Ag /ZrO 2 /Ta structure was prepared by using themagnetron sputtering technique . The field emission scanning electron microscopy (FESEM) was applied to investigate the microstructure of device. The Raman spectra was obtained to characterize the ZrO 2 structure. The measurement result ofcurrent volta ge ( I-V) show s that the fabricated device exhibit s stable bipolar resistiveswitching (RS) characteristics under room temperature. The underlying mechanism ofresistive switching can be correlated with the trap filled space-charge limited conduction (SCLC) and the trap distribution. The SET and RESET operation voltages shows little change distribution during repeated operations. The characteristics retention exhibits excellent. The achieved characteristics of the RS based on amorphous ZrO 2 show as apromising candidate for nonvolatile memory applications.