Resistance switching memory characteristics of CaF2/Si/CaF2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers

摘要

A novel resistance switching memory using CaF2/Si/CaF2 resonant-tunneling quantum well heterostructures sandwiched by nanocrystalline Si (nc-Si) as secondary barrier layers has been proposed and the room temperature current-voltage characteristics of the basic resistance switching memory operation have been demonstrated. A resistance switching voltage of 1.0V, a peak current density of approximately 42 kA/cm(2), and an ON/OFF ratio of 2.8 were observed. In particular, more than 28000 write-read-erase cyclic memory operations have been demonstrated by applying pulsed input voltage sequences, which suggests better endurance than the device using a CaF2/CdF2/CaF2 heterostructure. (C) 2016 The Japan Society of Applied Physics