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首页> 外文期刊>Journal of Chemical Engineering of Japan >Preparation and Characterization of TiO2 Thin Films on Silica Gel Powders by Plasma Enhanced Chemical Vapor Deposition in a Circulating Fluidized Bed Reactor
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Preparation and Characterization of TiO2 Thin Films on Silica Gel Powders by Plasma Enhanced Chemical Vapor Deposition in a Circulating Fluidized Bed Reactor

机译:循环流化床反应器中等离子体增强化学气相沉积法制备硅胶粉末上的TiO2薄膜及其表征

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摘要

References(18) Cited-By(1) Plasma Enhanced Chemical Vapor Deposition (PECVD) of TiO2 thin films on silica gel powders at atmospheric pressure in a Circulating Fluidized Bed (CFB) reactor was carried out. In addition, TiO2 thin films on silica gel powders were prepared by the sol–gel method and compared with the TiO2-deposited powders by PECVD. The characteristics of those thin films were determined by X-ray diffraction spectra, Raman spectroscopy, SEM and BET. Without heat treatment, anatase phase was crystallized well by PECVD in a CFB reactor. Specific surface area of the TiO2-deposited silica gel by PECVD exhibits a larger value than that by the sol–gel method. By the PECVD method, TiO2 thin films are uniformly deposited on the external surface of silica gel.
机译:参考文献(18)在大气压下在循环流化床(CFB)反应器中进行了TiO2薄膜在硅胶粉末上的等离子增强化学气相沉积(PECVD)。另外,通过溶胶-凝胶法在硅胶粉末上制备了TiO2薄膜,并通过PECVD与TiO2沉积的粉末进行了比较。这些薄膜的特性通过X射线衍射光谱,拉曼光谱,SEM和BET确定。不进行热处理,在CFB反应器中通过PECVD使锐钛矿相充分结晶。 PECVD法沉积的TiO2硅胶的比表面积显示出比溶胶-凝胶法更大的比表面积。通过PECVD法,将TiO 2薄膜均匀地沉积在硅胶的外表面上。

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