Enhanced Transient Hot Electron Concentration in n-Type Indium Antimonide (InSb) Semi-Conducting Thin Film in Nanosecond Time Regime

Musongong; Eugene

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Enhanced Transient Hot Electron Concentration in n-Type Indium Antimonide (InSb) Semi-Conducting Thin Film in Nanosecond Time Regime

机译：纳秒级系统中n型锑化铟（InSb）半导体薄膜中增强的瞬态热电子浓度

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In this study, the variation of electron-lattice temperature in the nanosecond (ns) time regime nearly impossible with metals has been presented and it is clearly shown that non-equilibrium temperature in the nanosecond (ns) time regime of several hundred

机译：在这项研究中，已经提出了金属几乎不可能在纳秒（ns）时间范围内变化的电子晶格温度，并且清楚地表明，在几百纳秒（ns）时间范围内的非平衡温度。

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《Journal of Applied Sciences》 |2007年第22期|共9页
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Musongong; Eugene;
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中图分类农业科学;
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1. Growth and characterization of n-type indium antimonide thin films structure deposited by electron beam evaporation technique [J] . Rahul, S.R.Vishwakarma, Ravishankar Nath Tripathi, Materials science . 2011,第2期

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2. Study of structural property of n-type indium antimonide thin films [J] . Vishwakarma S.R., Verma A.K., Tripathi R.S.N., Indian Journal of Pure & Applied Physics . 2012,第5期

机译：n型铟锑化物薄膜的结构性能研究
3. Time resolved spectra of optical and electrical transient response induced by nanosecond laser pulses in amorphous AgInSbTe films [J] . Fengxiao Zhai, Guangfei Liang, Yang Wang, Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic . 2014,第20期

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4. Real-time measurement of electrical and optical transients of as-deposited amorphous AgInSbTe thin films during crystallization induced by single-shot picosecond laser pulses [C] . G. F. Liang, S. M. Li, H. Huang, International workshop on information storage . 2013

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7. Enhanced Transient Hot Electron Concentration in n-Type Indium Antimonide (InSb) Semi-Conducting Thin Film in Nanosecond Time Regime [O] . Musongong Eugene 2007

机译：在纳秒时制度中增强N型铟抗衍生物（INSB）半导体薄膜中的瞬态热电子浓度

Enhanced Transient Hot Electron Concentration in n-Type Indium Antimonide (InSb) Semi-Conducting Thin Film in Nanosecond Time Regime

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