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Aerosol-assisted chemical vapor deposition of copper sulfide nanostructured thin film from newly synthesized single-source precursor

机译:新合成的单源前驱体气溶胶辅助化学气相沉积硫化铜纳米结构薄膜

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The copper(II) complex of N-[ethyl(butyl)carbamothioyl]-3,5-dinitrobenzamide (1) has been synthesized and characterizedby elemental analysis, IR spectroscopy, and atmospheric pressure chemical ionization-mass spectrometry. Thermogravimetric analysis shows that complex 2 decomposes in 2 steps to form copper sulfide. The complex was used as a single-source precursor for the deposition of copper sulfide thin film by aerosol-assisted chemical vapor deposition at 350 °C. The powder X-ray diffraction pattern of thin film of the complex showed the deposition of monoclinic roxbyite Cu_7S_4 and orthorhombic anilite Cu_7S_4 phases at 350 °C with spherical crystallites. The degree of film surface roughness was determined by atomic force microscopy. The scanning electron microscopy and energy dispersive X-ray analysis results showed the uniform distribution of copper sulfide in the film, which makes it a useful semiconducting material on a structured surface.
机译:合成了N- [乙基(丁基)氨基甲硫酰基] -3,5-二硝基苯甲酰胺(1)的铜(II)配合物,并通过元素分析,红外光谱和大气压化学电离质谱法对其进行了表征。热重分析表明,络合物2分两步分解形成硫化铜。该络合物用作单源前驱体,用于在350°C时通过气溶胶辅助化学气相沉积法沉积硫化铜薄膜。配合物薄膜的粉末X射线衍射图谱显示在350℃下具有球形微晶的单斜斜方晶Cu_7S_4相和斜方晶苯胺体Cu_7S_4相的沉积。膜表面粗糙度的程度通过原子力显微镜确定。扫描电子显微镜和能量色散X射线分析结果表明,硫化铜在薄膜中的分布均匀,这使其成为结构化表面上有用的半导体材料。

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