Depth Profiling of Boron in Silicon by High-resolution Medium Energy Elastic Recoil Detection Analysis

摘要

The feasibility of the high-resolution medium energy elastic recoil detection analysis using a sector type magnetic spectrometer was studied for the depth profiling of boron in silicon. Two different methods were examined to reject the scattered probe ions. One is installation of a thin mylar foil in front of the focal plane detector of the spectrometer. The other is the use of He+ ions as a probe. The pros and cons of these two methods as well as high-resolution RBS were discussed based on the experimental results. It was demonstrated that the use of He+ ions as a probe is the best method among these three methods. [DOI: 10.1380/ejssnt.2012.655]