3.6%-CZTSS Device Fabricated From Ionic Liquid Electrodeposited SnLayer

摘要

Cu/Sn/Zn stacked layers were electrodeposited and subsequently annealed in a tube furnace in elemental sulfurand selenium at 570oC. Cyclic voltammogram of Sn-salt in ionic liquid was recorded. Thin films were characterized byinductively coupled plasma-mass spectrometry (ICP-MS), Auger electron spectroscopy (AES) and scanning electronmicroscopy (SEM). The device was characterized by current-voltage (I-V) and quantum efficiency (QE). The devicefabricated using electrodeposited precursor film resulted in efficiencies of 3.6%.