Mitsubishi Electric Develops High-output, High-efficiency GaN Power Amplifier on Si Substrate for Mobile Communications Base Stations

摘要

Tokyo, June 20, 2012 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed a prototype high-output, high-efficiency 2GHz power amplifier for mobile communications base stations. The amplifier, which features a gallium nitride (GaN) transistor on a silicon (Si) substrate instead of a more costly silicon carbide (SiC), achieves a conversion efficiency rating of 70%, unprecedented among 2GHz power amplifiers with outputs of 150W or higher. Enlarge ..