Mitsubishi Electric to Release Sample 220W-output power GaN-HEMT for 2.6GHz-band 4G Mobile Communication Base Transceiver Stations

摘要

TOKYO, August 31, 2016 - Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering world-leading* efficiency for 2.6GHz-band Base Transceiver Stations (BTS) of fourth-generation (4G) mobile communication systems. Samples will be released starting November 1. * According to Mitsubishi Electric as of August 31, 2016 Enlarge New GaN-HEMT for 2.6GHz 4G BTS (MGFS53G27ET1) ..