Band Anti-Crossing Modelling on Tailored Ga_1-xIn_xN _yAs_1-y Band Gap Energy Based Nitrogen Fraction

摘要

This paper deals with a Band Anti-Crossing (BAC) modelling to investigate the tailoring of band gap energy of Ga1-xInxNyAs1-y alloy based on nitrogen fractions. Three different numerical methods have been adopted to estimate the extended state of conduction band ( ) parameters. The first two methods used Vegard’s law and Varshni’s equation to estimate by considering Ga_(1-x)In_(x)As as ternary alloy based on temperature dependence, with values of bowing parameter of 0.475 and 0.477, respectively. The third method used excitonic band gap theory for Ga1-xInxAs alloy temperature dependence by considering Passler fitting ( ) and average phonon temperature ( ). Results depict that optimum nitrogen fraction was in the range of 0.012 to 0.018% to achieve the device response at 1.3 μm wavelength, with an energy band gap in range of 0.955 ± 0.005 eV. Future work shows a potential study on influence of indium fractions in tailored energy band gap of Ga_(1-x)In_(x)N _(y)As_(1-y ) alloy and compressive strain of material.