Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors

摘要

The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current ID and the draina??source voltage VD, as well as the (IDa??VG) characteristics before, during and after irradiations at different temperatures T (VG is the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes. To interpret experimental data there were proposed the models taking into account the separate contributions of charges in the dielectric Qt and in SiO2a??Si interface Qs. The modela??s parameters ??Vt(D,T) and ??Vs(D,T) were calculated using the experimental IDa??VG characteristics. These models can be used to predict performances of MISFET-based devices.