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Quasi-Free-Standing Graphene Monolayer on a Ni Crystal through Spontaneous Na Intercalation

机译:通过自发Na嵌入在Ni晶体上的准自由站立石墨烯单层

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Graphene on metal substrates often shows different electronic properties from isolated graphene because of graphene-substrate interactions. One needs to remove the metals with acids and then to transfer graphene to weakly interacting substrates to recover electrical properties inherent in graphene. This process is not easy and besides causes undesirable tears, defects, and impurities in graphene. Here, we report a method to recover the electronic structure of graphene from a strongly interacting Ni substrate by spontaneous Na intercalation. In order to characterize the intercalation process, the density-functional-theory calculations and angle-resolved photoemission-spectroscopy (ARPES) and scanning-tunneling-microscopy (STM) measurements are carried out. From the density-functional-theory calculations, Na atoms energetically prefer interface intercalation to surface adsorption for the graphene/Ni(111) surface. Unlike most intercalants, Na atoms intercalate spontaneously at room temperature due to a tiny diffusion barrier, which is consistent with our temperature-dependent ARPES and core-level photoemission spectroscopy, and with our submonolayer ARPES and STM results at room temperature. As a result of the spontaneous intercalation, the electronic structure of graphene is almost recovered, as confirmed by the Dirac cone with a negligible band gap in ARPES and the sixfold symmetry in STM.
机译:由于石墨烯与基材的相互作用,金属基材上的石墨烯通常显示出与孤立的石墨烯不同的电子性能。人们需要用酸去除金属,然后将石墨烯转移到弱相互作用的基材上,以恢复石墨烯固有的电性能。这个过程并不容易,而且还会在石墨烯中引起不良的撕裂,缺陷和杂质。在这里,我们报告了一种通过自发Na嵌入从强相互作用的Ni基体中恢复石墨烯电子结构的方法。为了表征插层过程,进行了密度泛函理论计算以及角度分辨光发射光谱(ARPES)和扫描隧道显微镜(STM)测量。从密度泛函理论计算中,Na原子在石墨烯/ Ni(111)表面的表面吸附上比在表面吸附上更倾向于界面插层。与大多数嵌入剂不同,Na原子由于很小的扩散势垒在室温下自发嵌入,这与我们依赖温度的ARPES和核心能级光发射光谱学以及亚单层ARPES和STM在室温下的结果一致。自发插入的结果是,几乎可以恢复石墨烯的电子结构,这是由狄拉克锥所证实的,其ARPES的带隙可忽略不计,而STM的对称性为六倍。

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