Effects of process parameters on the microstructure and conductive properties of LaNiO3 thin films

摘要

ConductivefilmsofperovskiteLaNiO3(LNO)weregrownonLaAlO3(LAO)andsilicausingradiofrequencysputtering.Effectsofprocessparameterssuchasannealingcondition,depositionatmosphere,depositiontemperatureandsputteringtimeonthemicrostructureandconductivepropertieswereinvestigated.Experimentalanalysisshowedthemicrostructureandconductivepropertiesoffilmswereimprovedafterannealing.AmixtureofO2andArwithratioof1:6wastheoptimalatmosphere.Itwasfoundthatthetemperaturetoachieveminimumresistivitywas200deg;CwhenLNOfilmwasdepositedonLAOsubstrate.Asemiconductivepropertywasfoundwhensputteringtimedecreaseddownto5minutes.LNOfilmswithresistivityof3.9times;10-4Omega;middot;cmwasfabricated,whichprovidedoptimumelectrodesforthesubsequentepitaxialgrowthofferroelectricthinfilms.