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首页> 外文期刊>Optoelectronics and Advanced Materials-Rapid Communications >Second-order nonlinearity of doped H:SiO2 films prepared by Matrix Distributed Electron Cyclotron Resonance and irradiated by electron beam

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Second-order nonlinearity of doped H:SiO2 films prepared by Matrix Distributed Electron Cyclotron Resonance and irradiated by electron beam

机译：矩阵分布电子回旋共振制备电子束辐照的H：SiO2掺杂薄膜的二阶非线性

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《Optoelectronics and Advanced Materials-Rapid Communications》 |2007年第2007期|共页
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1. Deposition of Ge-doped silica thin films for an integrated optic application using a matrix distributed electron cyclotron resonance PECVD reactor [J] . Roelene Botha, Pavel V. Bulkin, Pieter L. Swart Optical Materials . 2007,第2期

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4. Resistive Switching Effect in Thermal SiO2 Films Treated in Electron-Cyclotron Resonance Hydrogen Plasma [C] . Ramin Iskhakzay, Vitalii Voronkovskii, Vladimir Aliev, International Conference of Young Professionals in Electron Devices and Materials . 2021

机译：电子 - 回旋谐振氢等离子体中热SiO2薄膜中电阻切换效果
5. Electron cyclotron resonance chemical vapor deposition of precious metal-doped diamond-like carbon films. [D] . Ueno, Mayumi. 2000

机译：电子回旋共振化学气相沉积的贵金属掺杂类金刚石碳膜。
6. Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces [O] . S. Gurbán, P. Petrik, M. Serényi, -1

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7. Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering [O] . R. Reshmi Krishnan, Ganesh Sanjeev, Radhakrishna Prabhu, 2018

机译：电子束辐射对RF磁控溅射制备的Cu掺杂In2O3薄膜结构和光学性质的影响
8. Growth and Doping of Al(x)Ga(1-x)N Films by Electron Cyclotron Resonance AssistedMolecular Beam [R] . Moustakas, T. D. 1994

机译：电子回旋共振辅助分子束生长和掺杂al（x）Ga（1-x）N薄膜

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