3.3 KV SiC Power Module with Low Switching Loss

摘要

Silicon Carbide (SiC) devices are promising candidates for high power, high speed, and high temperature switches owing to their superior properties. We have been developing SiC metal-oxide-semiconductor field effect transistors (MOSFETs) and SiC Schottky barrier diodes (SBDs) of 3.3-kilovolt class. The fabricated SiC power module successfully reduced switching losses to one-third to that of the conventional Si IGBT module. This paper evaluates the performance of a full SiC module compared to the conventional one.