Transient-thermo-reflectance for the study of surface carrier dynamics

摘要

In this work we present a non-destructive examination (NDE) pump-probe technique known as transient-thermo-reflectance (TTR) for the study of transient carrier dynamics in semiconductor and metal surfaces at low fluence regime. The technique enables to measure the change in reflectance at the sample surface as a function of time on the femtosecond time regime. Changes in reflectance can then be used to determine properties of the sample. Experimental results are compared with numerical model calculations.