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Synthesis of Well-aligned ZnO Nanowires without Catalysts

机译:不含催化剂的取向良好的ZnO纳米线的合成

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Well aligned ZnO nanowires were synthesized by thermal evaporation method using c-oriented ZnO thin films as substrate without any catalysts or additives. The synthesized nanowires have two typical average diameters: 60 nm in majority and 120 nm in minority. The ZnO nanowires are about 4 mm in length and well aligned along the normal direction of the substrate. Most of the ZnO nanowires are single crystalline with a hexagonal structure and grow along the [001] direction. Photoluminescence spectrum shows that the ZnO nanowires have a single strong ultraviolet emission at 380 nm, indicating that the ZnO nanowire arrays can be used in optoelectronic devices.
机译:取向良好的ZnO纳米线是通过热蒸发法合成的,使用c取向的ZnO薄膜作为基材,没有任何催化剂或添加剂。合成的纳米线具有两个典型的平均直径:多数为60 nm,少数为120 nm。 ZnO纳米线的长度约为4毫米,并沿着基板的法线方向很好地对齐。多数ZnO纳米线是具有六边形结构的单晶,并沿[001]方向生长。光致发光光谱表明,ZnO纳米线在380 nm处具有单一的强紫外线发射,这表明ZnO纳米线阵列可用于光电器件。

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