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首页> 外文期刊>Research Journal of Chemical Sciences >Quantum Confinement effects on the Band Gap of Bi2S3 Thin Films using Chemical Bath Deposition
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Quantum Confinement effects on the Band Gap of Bi2S3 Thin Films using Chemical Bath Deposition

机译:化学浴沉积对Bi2S3薄膜带隙的量子限制效应

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Chemical bath deposition technique has been used to prepare Bi_(2)S_(3) thin films for various applications. Optical absorption studies were carried out using UV-VIS-NIR Spectrophotometer (Model-V-570) in the wavelength range 190 nm to 2500 nm at room temperature. Transmittance spectra of Bi_(2)S_(3) thin films increases monotonically with the increase in wavelength; but decreases monotonically with the increase in film thickness. Optical band gap energy was decreased with increase in thickness.
机译:化学浴沉积技术已被用于制备Bi_(2)S_(3)薄膜用于各种应用。使用UV-VIS-NIR分光光度计(型号-V-570)在室温下在190nm至2500nm的波长范围内进行光吸收研究。 Bi_(2)S_(3)薄膜的透射光谱随波长的增加而单调增加。但随着膜厚度的增加而单调减少。光学带隙能量随着厚度的增加而减小。

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