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首页> 外文期刊>Materials Science >A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head
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A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

机译:垂直记录磁头的极尖凹陷的纳米等离子刻蚀工艺。

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The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR) based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference surface until it reaches the MT value. Low-energy Ar plasma at a small incident angle removes materials with selective ratios of 1?:?1.6?:?2.5?:?2.9 (AlTiC/Al2O3/NiCoFe/NiFe). It was selected to form the PTR. High-energy Ar plasma at a large incident angle exhibits almost same removal rates for all materials. It was adopted to make overall removal while keeping the recessed profile. An atomic force microscope (AFM) was used for measuring the recessed heights of pole tip and the MT value of the base surface. A transmission electronic microscopy (TEM) was chosen to examine the thickness of subsurface damage. A batch of production showed that the recessed heights can be successfully nanofabricated with the three-step plasma etching process.
机译:垂直记录头的磁极尖端由NiCoFe,NiFe,Al2O3和AlTiC材料堆叠而成。不同材料的表面在滑块的空气轴承表面下方设置为不同的高度。本文提出了一种基于离子束刻蚀系统的等离子干法刻蚀(PTR)的等离子体干法刻蚀工艺。小入射角的Ar和O2混合等离子体对非磁性材料的去除率很高。它被用来蚀刻参考表面,直到达到MT值为止。低能量的Ar等离子体以较小的入射角去除了选择性比为1?:?1.6?:?2.5?:?2.9(AlTiC / Al2O3 / NiCoFe / NiFe)的材料。选择它来形成PTR。大入射角的高能Ar等离子体对所有材料的去除率几乎相同。它被采用来整体去除,同时保持凹陷的轮廓。使用原子力显微镜(AFM)测量极尖的凹进高度和基面的MT值。选择了透射电子显微镜(TEM)检查表面损伤的厚度。批量生产表明,可以通过三步等离子体蚀刻工艺成功地将凹进高度纳米加工。

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