The Study of Electrical Properties for Multilayer La2O3/Al2O3 Dielectric Stacks and LaAlO3 Dielectric Film Deposited by ALD

摘要

The capacitance and leakage current properties of multilayer La~(2)O~(3)/Al~(2)O~(3) dielectric stacks and LaAlO~(3) dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La~(2)O~(3)/Al~(2)O~(3) stacks after post-deposition annealing (PDA) at 800?°C compared with PDA at 600?°C, which indicated the recombination of defects and dangling bonds performs better at the high- k /Si substrate interface for a higher annealing temperature. For LaAlO~(3) dielectric film, compared with multilayer La~(2)O~(3)/Al~(2)O~(3) dielectric stacks, a clear promotion of trapped charges density ( N ~(ot)) and a degradation of interface trap density ( D ~(it)) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO~(3) dielectric film compared with multilayer La~(2)O~(3)/Al~(2)O~(3) stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La~(2)O~(3)/Al~(2)O~(3) stack is achieved after annealing at a higher temperature for its less defects.