Decreasing Value of Mechanical Stress in a Semiconductor Heterostructure by Using Modified Materials

摘要

In this paper we presented an approach to model and results of modeling of relaxation of mechanical stress in a heterostructure with porous epitaxial layer. We also presented an approach to model and result of modeling of modification of the porosity under influence of the mechanical stress. Due to the analysis of relaxation of mechanical stress and modification of porosity we obtain, that porosity of epitaxial layer leads to decreasing of value of mechanical stress in heterostructure. At the same time density of the epitaxial layer increases under influence of mechanical stress.