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Strain Localization in Thin Films of Bi(Fe,Mn)O3 Due to the Formation of Stepped Mn4+-Rich Antiphase Boundaries

机译:Bi(Fe,Mn)O 3 薄膜中由于台阶状Mn 4 + -富相边界形成而引起的应变局部化

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The atomic structure and chemistry of thin films of Bi(Fe,Mn)O~(3) (BFMO) films with a target composition of Bi~(2)FeMnO~(6) on SrTiO~(3) are studied using scanning transmission electron microscopy imaging and electron energy loss spectroscopy. It is shown that Mn_(4+)-rich antiphase boundaries are locally nucleated right at the film substrate and then form stepped structures that are approximately pyramidal in three dimensions. These have the effect of confining the material below the pyramids in a highly strained state with an out-of-plane lattice parameter close to 4.1??. Outside the area enclosed by the antiphase boundaries, the out-of-plane lattice parameter is much closer to bulk values for BFMO. This suggests that to improve the crystallographic perfection of the films whilst retaining the strain state through as much of the film as possible, ways need to be found to prevent nucleation of the antiphase boundaries. Since the antiphase boundaries seem to form from the interaction of Mn with the Ti in the substrate, one route to perform this would be to grow a thin buffer layer of pure BiFeO~(3) on the SrTiO~(3) substrate to minimise any Mn-Ti interactions.
机译:利用扫描透射研究了目标为Bi〜(2)FeMnO〜(6)的Bi(Fe,Mn)O〜(3)(BFMO)薄膜的原子结构和化学性质。电子显微镜成像和电子能量损失谱。结果表明,富Mn_(4+)的反相边界在薄膜衬底上局部成核,然后形成在三个维度上近似金字塔形的阶梯结构。这些具有将材料限制在金字塔形下方的高度应变状态下的作用,其面外晶格参数接近4.1。在由反相边界包围的区域之外,平面外晶格参数非常接近BFMO的体积值。这表明,为了改善膜的晶体学完美性,同时保持通过尽可能多的膜的应变状态,需要找到防止反相边界成核的方法。由于反相边界似乎是由Mn与基底中的Ti的相互作用形成的,因此,执行此操作的一种方法是在SrTiO〜(3)基底上生长纯BiFeO〜(3)的薄缓冲层,以最小化任何Mn-Ti相互作用。

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