Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of 3 . 4 e V . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.
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机译：氮化镓（GaN）是具有3的直接带隙的III-V半导体。 4 e V。 GaN具有超高的热稳定性和出色的光学性能，因此在白光发光二极管，蓝色激光和场效应晶体管中具有重要的潜力，在未来的照明中将发挥主要作用，以降低能源成本和传感器以抵抗辐射。 GaN纳米材料继承了化合物的整体性能，同时拥有纳米材料的新型光电性能。这篇综述着重于没有模板的GaN纳米粒子的自组装，自组装的生长机理以及组装后的纳米结构在可再生能源上的潜在应用。
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