This paper presents a micromachined resonant pressure sensor. The sensor is designed to optimize the sensitivity and reduce the cross-talk between the driving electrodes and sensing electrodes. The relationship between the sensitivity of the sensor and the main design parameters is analyzed both theoretically and numerically. The sensing and driving electrodes are optimized to get both high sensing capacitance and low cross-talk. This sensor is fabricated using a micromachining process based on a silicon-on-insulator (SOI) wafer. An open-loop measurement system and a closed-loop self-oscillation system is employed to measure the characteristics of the sensor. The experiment result shows that the sensor has a pressure sensitivity of about 29 Hz/kPa, a nonlinearity of 0.02%FS, a hysteresis error of 0.05%FS, and a repeatability error of 0.01%FS. The temperature coefficient is less than 2 Hz/???°C in the range of ?￠????40 to 80 ???°C and the short-term stability of the sensor is better than 0.005%FS.
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